| 铁健,铁生年.半导体制造业用微纳米碳化硅粉体制备工艺研究[J].材料导报,2016,30(14):88-91 |
| 半导体制造业用微纳米碳化硅粉体制备工艺研究 |
| Preparation of Ultrafine Silicon Carbide Powder for Semiconductor Manufacturing |
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| DOI：10.11896/j.issn.1005-023X.2016.14.020 |
| 中文关键词: 微纳米碳化硅粉体 粒径分布 水流分级 冲击磨 |
| 英文关键词: micro-nano SiC powder, particle size distribution, water flow classification, impact grinding |
| 基金项目:青海省重点实验室发展专项资金(2014-Z-Y31;2015-Z-Y02) |
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| 中文摘要: |
| 采用水流分级和高能纳米冲击磨对原始SiC粉料进行微纳米粉体加工。研究结果表明:水流分级得到纯度98.42%、中位粒径0.404 μm的SiC粉体,比表面积由0.8879 m2/g提高到8.0321 m2/g;高能冲击磨得到纯度95.5%、中位粒径0.257 μm的SiC粉体,比表面积由0.8879 m2/g提高到8.2773 m2/g,SiC的粒径及比表面积达到半导体制造业用微纳米碳化硅粉体的技术标准。纯度分析表明碳化硅粉体的水流分级未引入杂质,化学成分基本不变；SiC粉体冲击磨加工纯度下降,其他杂质含量偏高。粉体形貌分析表明原始SiC粉料形貌为非球形,粒度分布不均匀,水流分级和冲击磨加工碳化硅粉体形貌为非球形,粒度分布较加工前更均匀。 |
| 英文摘要: |
| Water flow classification and high energy nanoimpact grinding were adopted for micro-nano powder processing of original SiC powder. The results showed that the SiC powder obtained from water flow classification had a purity of 98.42%, a median particle size of 0.404 μm, and an increase of specific surface area from 0.8879 m2/g to 8.0321 m2/g. The SiC powder obtained from high energy nanoimpact grinding had a purity of 95.5%, a median particle size of 0.257 μm, and an increase of specific surface area from 0.8879 m2/g to 8.2773 m2/g. The particle size and specific surface area of the prepared SiC powder reached the technical standards of micro-nano SiC powder for semiconductor manufacturing industry. The analysis of the purity of SiC powder illustrated that no impurity would be introduced by water flow classification and the chemical component of SiC powder kept unchanged, while the purity of SiC powder decreased after impact grinding process and impurity content increased. The morphology analysis illustrated that the morphology of original SiC powder was non-spherical with a wide size distribution,and the SiC powder after water flow classification and impact grinding processing was also non-spherical but with a narrower particle size distribution. |
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