| 马玉升,张立峰,李亚琼,Rowaid Raad Muslim.利用合金低温生长晶体硅的研究进展[J].材料导报,2017,31(1):110-115 |
| 利用合金低温生长晶体硅的研究进展 |
| Growing Crystalline Silicon with the Aid of Alloy Solvent at Low Temperature |
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| DOI：10.11896/j.issn.1005-023X.2017.01.015 |
| 中文关键词: 晶体硅 合金 低温 生长技术 |
| 英文关键词: crystalline silicon, alloy, low temperature, growth technique |
| 基金项目:国家自然科学基金(51334002;51274034;51404019)；中国博士后科学基金(2015M580985) |
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| 中文摘要: |
| 基于光伏行业对低成本晶体硅材料的巨大需求,晶体硅低温生长技术逐渐受到人们的青睐。该技术是在低温下将硅与低熔点金属进行共熔化处理,结合液相外延、合金定向凝固等技术生长、制备晶体硅。首先阐述了晶体硅低温制备原理,并对其生长行为、受控因素和应用现状进行综述,指出了目前各自存在的问题与难点,最后对下一阶段晶体硅生长技术的研究重点和发展前景进行了展望。 |
| 英文摘要: |
| With the increasing demand of low-cost crystalline silicon material for photovoltaic industry, people gradually pay close attention to silicon growth technology at low-temperature. This technique is that crystalline silicon can be produced in the low temperature process, in which silicon is firstly alloyed with low-melting-point metals and then recrystallized, i.e. liquid phase epitaxy and directional solidification refining techniques. In this review, based on the basic principle of silicon growth techniques, the current situations of research and applications of liquid phase epitaxy and directional solidification are reviewed in this work.In addition, the current problems and the research direction of silicon growth technology are presented. |
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