文章摘要
房迪,肖清泉,廖杨芳,袁正兵,王善兰,吴宏仙.钠钙玻璃上Mg2Si薄膜的制备及其电学性质[J].材料导报,2017,31(4):9-13
钠钙玻璃上Mg2Si薄膜的制备及其电学性质
Fabrication and Electrical Properties of Mg2Si Films on Soda Lime Glass
  
DOI：10.11896/j.issn.1005-023X.2017.04.003
中文关键词: 钠钙玻璃 Mg2Si薄膜 膜厚 磁控溅射
英文关键词: soda-lime glass, Mg2Si film, film thickness, magnetron sputtering
基金项目:国家自然科学基金(61264004)；贵州省科技攻关计划(黔科合GY字[2011]3015)；贵州省国际科技合作项目(黔科合外G字[2013]7003)；贵州省教育厅“125”重大科技专项(黔教合重大专项字[2012]003)；贵阳市科技计划(筑科合同[2012101]2-16)；贵州省自然科学基金(黔科合J字[2014]2052;黔科合J字[2013]2209)；安顺学院航空电子电气与信息网络贵州省高校工程技术研究中心开放基金(HKDZ201403)；贵州省青年英才培养工程项目(黔省专合字[2012]152)；贵州省科技厅贵州大学联合基金(黔科合LH字[2014]7610)；贵州大学研究生创新基金(研理工2016068)
作者单位E-mail
房迪 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025  
肖清泉 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025
安顺学院航空电子电气与信息网络贵州省高校工程技术研究中心, 安顺 561000 		707152360@qq.com 
廖杨芳 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025
贵州师范大学物理与电子科学学院, 贵阳 550001 		 
袁正兵 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025  
王善兰 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025  
吴宏仙 贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳 550025  
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中文摘要:
      采用磁控溅射技术和退火工艺在钠钙玻璃衬底上制备了Mg2Si半导体薄膜,研究了Mg膜厚度对Mg2Si薄膜结构及其电学性质的影响。在钠钙玻璃上分别溅射两组相同厚度(175 nm)的P-Si和N-Si膜,然后在其上溅射不同厚度Mg膜(240 nm、256 nm、272 nm、288 nm、304 nm),低真空退火4 h制备一系列Mg2Si半导体薄膜。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、霍尔效应测试仪对Mg2Si薄膜的晶体结构、表面形貌、电学性质进行表征与分析。结果表明:采用磁控溅射技术在钠钙玻璃衬底上成功制备出以Mg2Si (220)为主的Mg2Si薄膜。随着沉积Mg膜厚度的增加,Mg2Si衍射峰逐渐增强,薄膜表面更连续,电阻率逐渐减小,霍尔迁移率逐渐降低,载流子浓度逐渐增加。此外,Si膜导电类型和Mg膜厚度共同影响Mg2Si薄膜的导电类型。溅射N-Si膜时,Mg2Si薄膜的导电类型随着Mg膜厚度的增加由P型转化为N型；溅射P-Si膜时,Mg2Si薄膜的导电类型为P型。可以控制制备的Mg2Si半导体薄膜的导电类型,这对Mg2Si薄膜的器件开发有着重要的指导意义。
英文摘要:
      Semiconducting Mg2Si films were prepared by magnetron sputtering deposition and subsequent annealing on soda-lime glass substrates. The influences of Mg film thickness on the crystal structure and electrical properties of Mg2Si films were investigated. P-Si and N-Si films with same thickness (175 nm) were deposited on different soda-lime glass substrates by magnetron sputtering, and then Mg films with different thicknesses (240 nm, 256 nm, 272 nm, 288 nm and 304 nm) were deposited on Si films. A series of Mg2Si semiconductor films were prepared by low vacuum annealing for 4 h. The crystal structure, surface morphology and electrical properties of the obtained films were characterized and analyzed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement system. The results show that Mg2Si films with preferential growth of Mg2Si (220) are prepared successfully by magnetron sputtering technique on soda-lime glass substrates, and that the diffraction peak intensity of obtained Mg2Si films increases with the increase of thickness of Mg films on Si films. Meantime both the electrical resistivity and mobi-lity decrease, and carrier concentrations increase. The surfaces of the films become continuous with the increase of thickness of Mg films on Si films. Both the electrical conduction type of deposited Si films and the thickness of deposited Mg films affect the electrical conduction type of the obtained Mg2Si films. When the N-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg2Si films changes from P-type to N-type with the increase of the thickness of deposited Mg films on Si films. When the P-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg2Si films becomes P-type. The electrical conduction type of the obtained Mg2Si films can be controlled conveniently, which is beneficial to the device development of the Mg2Si films.
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