| 张小红,杨卿,张旭晨,马研,易筱银.热氧化ZnS∶Ga制备ZnO∶Ga薄膜及其光致发光性能[J].材料导报,2017,31(18):11-15 |
| 热氧化ZnS∶Ga制备ZnO∶Ga薄膜及其光致发光性能 |
| Preparation of ZnO∶Ga Films by Thermal Oxidation of ZnS∶Ga and Their Photoluminescent Properties |
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| DOI：10.11896/j.issn.1005-023X.2017.018.003 |
| 中文关键词: ZnS薄膜 ZnO薄膜 Ga掺杂 热氧化 光致发光 |
| 英文关键词: ZnS film, ZnO film, Ga doping, thermal oxidation, photoluminescence |
| 基金项目:国家自然科学基金(51202191);陕西省自然科学基础研究计划(2015JM5179);陕西省教育厅重点实验室科学研究计划项目(15JS072) |
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| 中文摘要: |
| 利用化学浴沉积法制备了不同Ga掺杂量的ZnS(ZnS∶Ga)薄膜,并采用热氧化法生长了Ga掺杂ZnO(ZnO∶Ga)薄膜,研究了ZnO∶Ga薄膜的表面形貌、成分及光致发光性能。结果表明:Ga的掺入改变了ZnO薄膜的微观结构、化学计量比、氧空位的相对含量,进而影响了薄膜的光致发光性能。随着Ga掺杂量增加,ZnO薄膜的致密度提高,颗粒尺寸减小;同时改善了ZnO的化学计量比,氧空位相对含量随之减少;ZnO薄膜的紫外光与可见光强度比增大。 |
| 英文摘要: |
| Ga-doped ZnS(ZnS∶Ga) films with different Ga content were prepared by chemical bath deposition, and then the thermal oxidation in the air was subsequently performed for the growth of Ga-doped ZnO(ZnO∶Ga) films. The microstructures, surface compositions, and photoluminescent properties of the ZnO∶Ga films were investigated. The results showed that the microstructure, stoichiometric ratio, and the relative content of oxygen vacancy of ZnO films were altered due to Ga doping, which then affected the photoluminescent properties of ZnO films. The increase of Ga content led to improved compactness and refined particle size of the product, resulted in a more near-stoichiometric composition of ZnO, lowered the relative content of oxygen vacancy, also enhanced the IUV/IVis ratio. |
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