| 郝立成,张明,陈文超,冯晓东.高效本征薄层异质结(HIT)太阳电池技术研究进展[J].材料导报,2018,32(5):689-695, 714 |
| 高效本征薄层异质结(HIT)太阳电池技术研究进展 |
| A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer (HIT) Solar Cells |
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| DOI：10.11896/j.issn.1005-023X.2018.05.001 |
| 中文关键词: 能带带阶 钝化 载流子迁移率 高效本征薄层异质结(HIT) 太阳电池 |
| 英文关键词: band gap, passivation, carrier mobility, heterojunction with intrinsic thin-layer(HIT), solar cell |
| 基金项目:江苏高校优势学科建设工程 |
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| 中文摘要: |
| 高效本征薄层异质结(HIT)是由本征钝化层沉积在a-Si/c-Si界面处组成,这种硅异质结(SHJ)结构由于钝化性能好,实际效率值往往比同质结电池更高。本文首先介绍了HIT高效电池发展现状、电池基本结构的特点,然后从制备工艺、钝化原理、能带带阶等几个方面对衬底层、非晶硅层(本征/掺杂)、TCO薄膜以及金属格栅电极展开讨论,并对未来高效HIT电池的工业化发展趋势做了展望。 |
| 英文摘要: |
| Heterojunction with intrinsic thin-layer (HIT) consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which forms a silicon heterojunction (SHJ) structure with the major advantages of full exploitation of the excellent passivation properties of a-Si∶H films, and consequently, the energy conversion efficiencies higher than homogenous cells. The paper provides an introduction on the development and the structure of the HIT solar cells, and a discussion upon the wafer layers, the a-Si (undoped/doped) layers, the TCO (transparent conducting oxides) films and the metal grid electrodes from the perspectives of fabrication processes, the principle of passivation, and the band gap. Finally a prospect on the future trends are also proposed. |
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